Power Electronics Lecture Series: Power BJ

Symbol, Structure, and Characteristics

Introduction to Power BJ

  • Power BJ is a bipolar junction transistor used in power electronics.
  • It has three terminals: base, emit, and collector.
  • The symbol for N p configuration is depicted with an arrow head towards the emit terminal.
  • Power BJ is designed to handle high power and has a larger cross-sectional area.
  • We will focus on N p transistor for internal analysis and comparison with normal BJ.

Structure of Power BJ

  • Power BJ has three layers: n plus, p, and n minus.
  • The collector drift region is added for handling high breakdown voltage.
  • The cross-sectional area and doping level are increased for power handling capacity.
  • The symbol remains the same as normal BJ, but with additional layers.
  • The structure is crucial for efficient power operation.

Characteristics of Power BJ

  • Power BJ exhibits different modes in the output characteristics.
  • These modes include cutoff, active, quasi-saturation, and hard saturation.
  • Cutoff mode occurs when both junctions are reverse biased.
  • Active mode functions as an amplifier and is not extensively covered in power electronics.
  • Quasi-saturation offers advantages like lower on-state resistance and quick turn-off, making it suitable for high-frequency applications.
  • Hard saturation has lower resistance and power loss but is used for low-frequency operation.